RF power MOSFETs feature half-bridge topology07 Jun 2012
Microsemi's DRF family of products integrates RF gate drivers, power MOSFETs and associated bypass capacitors in a single highly thermal performance package. The DRF1400 is a half-bridge topology and it is the first device of its type in the company's DRF family to deliver efficiency of greater than 92 percent at 1kW, said Microsemi. In addition, the low parasitic capacitance and inductance, coupled with the Schmitt trigger input, Kelvin signal ground, anti-ring function, invert and non-invert select pin, provide improved stability and control in kW to multikilowatt, high frequency ISM applications. The high level of integration also allows the product to reduce BOM component counts and costs.
The DRF family likewise features integrated RF drivers for simplified driver stage design, allowing simple logic signals at input, and internal bypass capacitors for reduced parasitic inductance and stable supply voltages, revealed the company. In addition, the devices tout high breakdown voltage (500V) MOSFETs, enabling higher power output per half-bridge, and high thermal performance proprietary package capable of delivering up to 1.4kW of power.
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