This paper discusses soft errors, hot carrier injection, time dependent dielectric breakdown, negative bias temperature instability, latchup, and leakage currents in the 90 nm and smaller device-technology nodes. Each issue is reviewed with respect to its effect on system design using ASSP, ASIC, or FPGA devices, and what Xilinx has done to alleviate the potential problems. Click here for more information:
Xilinx
