Samsung Electronics Co. Ltd, in advanced memory technology, announced that it has begun mass producing the 1Gigabit (Gb) DDR2 DRAM (dynamic random access memory) using 60 nanometer (nm)–class process technology.
Use of the new process technology has increased production efficiency by 40 percent over the 80nm process technology deployed in DRAM fabrication since early 2006, and offers twice the productivity of 90nm general process technology. Ample market availability of 1 GB DRAM will further increase the demand for large density DRAMs as new premium Vista operating system imposes a DRAM requirement of at least 1Gigabyte (GB).
In addition to its 60nm process technology innovation, Samsung¡¯s use of metal-insulator metal (MIM) for its capacitors provides enhanced data storage in sub-70nm designs.
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