STMicroelectronics brings 65nm PR family of NOR flash memory
(Technology News, 06 Mar 2007 )
STMicroelectronics, a supplier of Flash memory solutions for mobile phones, announced the availability of the 65nm PR family of NOR Flash memory. Based on fourth generation multi level cell (MLC) technology, the 65nm PR family is fully hardware and software compatible with the existing 90nm NOR Flash PR family, providing an easy migration path for customers, while offering increased memory density and better performance.
The 65nm PR family from ST offers up to 133MHz in burst read speed, program throughput of 1.0-Mbyte/sec, and deep power down mode with 1.8V power operation. This advanced NOR Flash family is offered in combinations with LPSDRAM, LPDDR-SDRAM, PSRAM, and NAND devices supporting shared bus and split bus configuration in Multi Chip Packages (MCP) and Package on package (PoP) solutions.
Geoff MacGillivray, lead memory analyst for Semiconductor Insights, said, "By reaching the 65nm process lithography, STMicroelectronics offers a solution, giving OEMs an option when designing in high density NOR Flash solutions. Comparing with the main competitor, the ST 1-Gbit MLC NOR Flash, with a die size of 50.8mm, has the small die size resulting in the highest Mbit/mm rating at 20.16-Mbit/mm. Equally impressive is the small cell size, measuring only 0.042�m."
The 65nm PR family is part of the collaboration that STMicroelectronics and Intel announced in December 2005. This ongoing cooperation provides customers with the latest high performance products, with the flexibility of multiple sources.
