Hynix Semiconductor Inc. has developed the 185MHz 512megabit mobile DDR SDRAM with ECC (Error Correction Code). The built in ECC, similar to that used in NAND Flash, ensures data integrity. Hynix’s 512Mb ECC mobile DDR is manufactured on the Company’s 80nm process technology and is offered in JEDEC standard pin-out and packages.
Kim Yong Tark, VP of mobile division, Hynix, said, "As handheld products such as mobile phones require higher density memory components, the current consumption of mobile DRAMs has become a very critical issue for OEMs. Hynix’s ECC mobile DDR meets the system designers’ need for high density, data integrity and very low power consumption extending battery life."
Hynix Semiconductor
