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MMIC utilizes SiGe HBT process

( 01 Jun 2002 )
By Asha Yoon in South Korea

Tachyonics, a domestic SiGe semiconductor developer, has entered the MMIC (Monolithic Microwave Integrated Circuit) market for wireless communications with its SiGe HBT (Hetero Junction Bipolar Transistor) process technology and cell library. The company recently launched its single-chip high frequency MMIC family, which includes two wideband amplifiers and two active double balanced mixers.

The wideband amplifiers (TARF2201, 2202) for wireless communication applications operate at 3.5 GHz and 2.4 GHz, respectively. They come in STO363 and SOT343 packages, with dimensions of 1.25 x 2 mm. The products boast a 4 dB noise factor and 21 dB transfer gain. The chip family suits amplifiers with bandwidth between 1 and 3 GHz, such as CDMA, GSM, IMT2000, GPS and W-LAN applications. The TARF2201 uses a Darlington pair topology with resistive feedback for broadband performance and stability over its entire temperature range. It has internally matched impedance of 50W and wide bandwidth. The TARF2202 uses the latest SiGe HBT process, which utilizes a multi-feedback cascade amplifier topology. It can be operated at 3V from a single power supply, and power gain is as high as 21dB at 1900 MHz. Applications include oscillator amplifiers, transmission stage buffers and IF/RF buffer amplifiers.

The MMIC family (TARF2304/2305) of downward frequency mixers consumes 11 mA. With a high transfer gain of 17 dB and low noise factor of 9.8 dB, it beats competing high-performance products operating at 3V. The device comes in an SOT26 package, 1.12 x 0.81 mm, and can be applied to PCSs and mobile phone receivers that require very small components.

The TARF2304 is designed for narrow- or wide-bandwidth commercial and industrial applications having RF inputs up to 2 GHz. It is particularly well suited for applications that require load-insensitive conversion and signal compression with minimum LO and bias power consumption. Features include RF-IF conversion gain from 0.05 to 2 GHz, low power dissipation (65 mW at VCC = 5V typical) and a bias voltage from a single power supply of 4 to 8V. It can be used in modulation/ demodulation, phase detection, fiber optics and GPS satellite navigation. The TARF 2305 features wideband operation f RF(IN) = 0.1 to 2.0 GHz, f RF(OUT) = 20 to 300 MHz, low current consumption (ICC = 11 mA) and built-in power save function.

“Following the success in mass production of RF power transistors in 2000, the launch of the wideband amplifier and downward frequency mixer families will let us rely on our own cell library,” says Jin-sung Choi, director of Tachyonics research center. “The chip family will replace imported products from big players like NEC, RFMD and HP in the domestic market, at competitive prices.”

The company expects to have these products on the market within this year. It is currently developing components for the 5-GHz bandwidth market as well.


Tachyonics
Fax (82) 2-863-4859
www.tachyonics.co.kr

 
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