Cambridge Semiconductor’s latest technology combines fast,high voltage Lateral Insulated Gate Bipolar Transistor (LIGBT) with gate drivers and low voltage, sophisticated control circuitry on a single silicon chip. Enabling designers to create smaller, lighter and more energy-efficient power conversion
products such as Switched Mode Power Supplies (SMPS), PowerBrane delivers a three-fold increase in current densities (at 30A/cm2) and switching speeds up to 10 times faster than today’s standard parts. This allows highly featured, single chip products to be manufactured within established silicon foundries without the need for complex and specialized manufacturing processes.
PowerBrane uses a CMOS-compliant MEMS process step of dry or wet etching to selectively remove substrate under the buried oxide and to leave an ultra-thin silicon oxide membrane that supports the high voltage without compromising the on-state current capability of the device. The resulting isolating membrane increases the breakdown voltages of LIGBTs 20-fold and delivers turn-off times of less than 50ns. Devices can be switched at over 500KHz, with the prospect of increasing to 1MHz leading to even better improvements in energy efficiencies.
Cambridge SemiconductorFax 44-0-1223-446451
www.camsemi.com
