International Rectifier's new 20V N-channel devices are optimized for VRM 10 power systems and high frequency, high current dc/dc converters for next generation Intel and AMD processors in high-end desktop computers and servers, as well as advanced telecom and datacom systems.
IRF6623 features enhanced control MOSFET performance with a 30% reduction in device on-resistance (RDS(on)) and gate charge (Qg) product, and is 50% smaller than other high-performing 20V control MOSFETs on the market. In addition, the RDS(on) and Qg product at 4.5V is 48.4mOhm-nC, and the Miller charge (Qgd) is 4.0nC, reducing switching losses.
IRF6620 is targeted at synchronous MOSFET applications up to 35A. It combines low Qg, Qgd, and QRR with a 30% improvement in RDS(on) compared to other high-performing 20V synch MOSFETs on the market. Typical RDS(on) for this product is 2.1mOhm (2.7mOhm max.) at 10V.
IRF6609 is designed for high performance in high-current (33A or more) synchronous MOSFET applications. The device combines low Qg, Qgd and ultra-low reverse recovery charge (QRR) with typical RDS(on) of 1.6mOhm (2.0mOhm max.) at 10V.
IRF6620, $0.98; IRF6623, $0.78; and IRF6609, $1.25; (10,000).
International RectifierFax 852-2540-5835
www.irf.com
