Nitronex qualifies new wafer fab for volume production
(Top News, 16 Nov 2007 )
Nitronex, the global leader in gallium nitride on silicon (GaN on Si) RF power transistors for the wireless infrastructure, broadband and military markets, has qualified its new, state-of-the-art manufacturing facility. The move from Raleigh to Durham began in first quarter 2007 and was finished in the second quarter, with qualification testing completed in October. The completed qualification verifies that Nitronex has successfully replicated the process developed in Raleigh at the new Durham fab and is prepared for volume production. A summary of Nitronex’s fabrication qualification report will be available in late November.
“Completing rigorous qualification verifies that the material produced in the new Durham facility matches material produced in Raleigh. The data for parts generated in Durham show the same reliability and performance when compared to products from our Raleigh facilities,” said Bruce Cochran, Nitronex VP of Operations. “This is a milestone for the company, and is further evidence that we have evolved from pilot line production to volume manufacturing.”
The successful qualification completes the relocation of the company into its new 85,000 square-foot R&D and manufacturing facility. This move enhances Nitronex’s current and future manufacturing capacity and capability, while also providing additional space for expanding research and development efforts.