0.16mm high voltage technology release to production
(Product News, 22 Nov 2007 )
Malaysian-based wafer foundry Silterra Malaysia has announced the release of 0.16mm high voltage technology for the display driver applications targeting the high resolution TFT panels used in mainstream and high-end mobile devices such as featured cell phones, smart phones, MP3/MP4 players, PDAs and digital cameras.
This latest high voltage technology features the proven 3.17mm2 SRAM bitcell which is suitable for the high density embedded memory design in display driver for QVGA (240RGBx320) and WQVGA (320RGBx432, Wide-Quarter-VGA) TFT panels. The new SRAM bitcell offers ~20% total die area reduction as compared with existing high volume display drivers based on 0.18µm technology in the market today. The standby current performance of the latest SRAM Macro with 3.17mm2 bitcell has been silicon verified and is meeting TFT panel industry requirement, which is 25 micro Ampere with 1.38Mega bits operates at high temperature 85oC.
In addition, the technology offers enhanced features such as Asymmetry High Voltage Well for denser design, One-Time-Programmable cell for gamma colour tuning, ESD protection and Metal capacitors design guidelines. This technology is fully supported by complete suite of essential IP’s and design kits which enable shorter time to market.
“Right now, we already have several design wins on the 0.16µm High Voltage technology and our customers are satisfied with the initial product yield. With the use of smaller SRAM bitcell on 0.16µm process technology, our customers can design smaller display driver chips very rapidly at lower cost, which are the key competitive advantages to win in the display driver market“, said Yit Loong Lai, Vice President of Worldwide Sales and Marketing.
