STMicroelectronics' new power MOSFET–the STV300NH02L–features low, micro-ohm ON-resistance to reduce losses and increase efficiency in demanding power supply systems. This new high-current N-channel device is intended particularly for the paralleling configuration power supplies that are widely used to increase system reliability in server applications.
Featuring an innovative ribbon-bonding technology that delivers a low typical Rds(on) of 800µΩ, the new device sets a new industry benchmark for high-current MOSFETs. Rated at 20V, the device is also ideal for reducing secondary rectification losses in high-efficiency DC DC converters, provides excellent protection under short-circuit conditions, with a very low turn-off time.
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