This family of 600V insulated gate bipolar transistors (IGBTs) reduces power dissipation by up to 30% in uninterruptible power supply (UPS) and solar inverter applications up to 3kW. Co-packaged with ultrafast soft recovery diodes, these IGBTs have lower collector-to-emitter saturation voltage (VCE(on)) and total switching energy (ETS) than punch-through (PT) and non-punch-through (NPT) type IGBTs. In addition, the internal ultrafast soft recovery diode improves efficiency and reduces EMI.
International Rectifier