OSRAM Opto Semiconductors’s research project produces new generation of laser bars
(Technology News, 27 Mar 2008 )
OSRAM Opto Semiconductors has announced that its “BRILASI” research project has improved the performance parameters of laser bars (laser chips) – their efficiency, output power, life time and beam quality – and matched them perfectly to each other. This is only part of its research project and the results include laser chips with a wavelength of 910 to 980 nm that achieve an optical output of 120 W under real industrial conditions and a typical efficiency of 70%.
“With this latest generation of laser bars we will be able to offer much more powerful components”, said Dr. Jörg Heerlein, Head of Product Marketing Lasers at OSRAM Opto Semiconductors. All manufacturers of diode lasers will benefit because OSRAM has been long established as an independent supplier of laser chips and laser bars. The semiconductor specialist will launch its performance offensive with laser bars that have a 50% fill factor. The fill factor of a bar defines the ratio of active width to overall width. The main applications of these laser bars include pumping of solid-state lasers and direct material processing. In addition to laser bars with a wavelength of 910 to 980 nm that achieve an efficiency of 70% at 120 W, there will be laser bars with wavelengths of 808 nm and 880 nm. These will have an efficiency of 62% at 120 W.
Structures with a fill factor of 20% complete the range of new more powerful components. They are perfect for optical fiber coupling applications. Here we can initially expect laser bars in the 910 to 980 nm wavelength range with a recommended output of 80 W.
With the new more powerful laser bars the system output can be increased with the same life time. Additionally, systems can also be made smaller and more reliable, offering the same output.
