Merrimac teams with Nitronex for development of highly integrated multi-mix power amplifiers for wireless infrastructure applications
(Business News, 07 Apr 2008 )
Merrimac Industries has entered into a Memorandum of Understanding (MOU) with Nitronex Corporation to develop new highly integrated power amplifiers using Merrimac's proprietary Multi-Mix® multilayer circuit technology and high-power gallium nitride (GaN) transistor technology from Nitronex. GaN device technology is highly sought as a higher-power replacement for GaAs and LDMOS device technology in communications equipment. The discrete transistors are ideal for high-power transmitter amplifiers in third-generation (3G) and fourth-generation (4G) wireless communications systems as well as emerging broadband WiMAX base stations. Nitronex has developed and qualified a GaN on Silicon process to service the needs of both Commercial Users in the Wireless Infrastructure Industry and Military users involved in Communications, Electronic Warfare and Radar systems. The ability to deliver high power, high frequency and broadband devices with outstanding efficiency is a key reason why users in both Commercial and Military systems are designing in GaN devices now.
