Hynix Semiconductor has announced the validation per Intel procedures and specifications of the 512MB(HMT164S6AFP6C-G7N0),1GB(HMT112S6AFP6C-G7N0) and 2GB (HMT125 S6AFP8C-G7N0) DDR3, 1066MHz SO-DIMMs all of which are assembled with 66nm 1Gb DDR3 SDRAM components. Hynix’s 66nm 1Gb DDR3 DRAM component was validated in October of last year.
Hynix’s validated DDR3 SODIMMs, 512Megabyte, 1Gigabyte and 2Gigabyte, consist of 1Gigabit DDR3 SDRAM component manufactured on the Company’s leading edge 66nm process technology. These devices boast operating speed of 1066MHz at 1.5V power supply. This speed is offered in latency combinations of 7-7-7 to suit the needs from a wide range of Mobile PCs.
In addition to its high speed characteristics, DDR3 features reduced current consumption by almost 25%, compared to the present generation DDR2. Hynix’s ‘three-dimensional transistor’ architecture minimizes current leakage to further reduce overall current consumption and ensure data integrity.
