New 20-V P-Channel TrenchFET power MOSFET in MICRO FOOT Chipscale package with industry's thinnest profile of 0.59-mm
(Technology News, 15 Apr 2008 )
To address the need for smaller components in portable devices, Vishay Intertechnology has released a new 20-V p-channel TrenchFET power MOSFET in a MICRO FOOT chipscale package with the industry's lowest profile and on-resistance for this device type.
The Vishay Siliconix Si8441DB offers an ultra-compact 0.59-mm profile and a footprint area of 1.5mm by 1mm. It is also the first device of its kind of offer an on-resistance rating at 1.2V. Typical applications for the new device will include load switching and battery protection in portable devices such as cell phones, PDAs, digital cameras, MP3 players, and smart phones.
The Si8441DB offers a low on-resistance range from 0.600Ω at 1.2-V VGS to 0.080 at 4.5-V VGS, with a maximum gate-source voltage of ±5V. The low on-resistance rating at 1.2V reduces the need for level shift circuitry, thus saving space in portable electronics designs.
Also released in the same MICRO FOOT package was the 20-V p-channel Si8451DB. Rated for a maximum gate-to-source voltage of 8V, on-resistance for the Si8451DB ranges from 0.200Ω at 1.5V to 0.080 Ω at 4.5V, the best such values ever achieved for a device with these voltage ratings.
As portable electronics become more compact, and their functionality increases, the available board space for power management circuitry decreases significantly. To meet consumer expectations for battery run times between charges, designers require smaller MOSFET packages with low power consumption- which is exactly what the Si8441DB and Si8451DB provide.
