ON Semiconductor expands power MOSFET and IGBT driver portfolio
(Product News, 25 Apr 2008 )
ON Semiconductor has expanded its MOSFET driver integrated circuit (IC) portfolio with the introduction of four new devices - the NCP5106, NCP5104, NCP5111 and NCP5304. These new power gate drivers target low- to mid-power applications and can be used in end products such as white goods, lighting ballasts, and industrial applications such as motor control.
These new high voltage, high-side and low-side drivers are specified over a wide temperature range -40 degrees Celsius (°C) < TJ < 125 °C, and can operate with an input voltage up to 600 volts (V), easing time and effort of design. All the devices feature a dV/dt immunity of 50 volts per nanosecond (V/ns) and are 3.3 V and 5 V input logic compatible. These devices use the bootstrap technique to ensure a proper drive of the high-side power switch and provide rugged design.
The NCP5104, NCP5106B, NCP5111, NCP5304 are high voltage power gate drivers that provide two outputs for direct drive of two N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration. The NCP5106A can be used in any other high-side plus low-side configuration.
Offered in both SOIC-8 and PDIP-8 packages, and priced respectively at US$0.80 and US$0.96 per unit in 2,500 unit quantities, the NCP5104, NCP5106, NCP5111and NCP5304 are pin-to-pin compatible with industry standard devices.
