Chartered Semiconductor Manufacturing has extended its joint development collaboration with IBM to include 22-nanometer (nm) bulk complementary metal oxide semiconductor (CMOS) technology.
The extension to 22nm builds on the original multi-year agreement that the two companies first signed in November 2002. Now in its sixth year, the collaborative development program has enabled Chartered to provide foundry access to a leading technology roadmap that leverages invention and innovation for manufacturing solutions, spanning five major generations of advanced process technology, including 90nm, 65nm, 45nm, 32nm, and now 22nm logic processes.
As with previous nodes, 22nm development activities will be conducted at IBM's 300 millimeter (mm) semiconductor fabrication facility in East Fishkill, N.Y.
Each company will have the ability to implement the jointly developed processes in its own manufacturing facilities.
Chartered Semiconductor Manufacturing, www.charteredsemi.com.
