The TPCA8A02-H and TPCA8A03-H MOSBD (MOSFET/Schottky-barrier-diode) devices eliminate external wiring between the MOSFET and the diodes for increased power efficiency and reduce wiring resistance and inductance. The TPCA8A02-H features a 30V drain-to-source voltage with a maximum 34A drain current, and a 4.8-mΩ on-resistance; the TPCA8A03-H provides a 30V drain-source voltage with a maximum 15A maximum drain current, and a typical 5.1-mΩ on-resistance. The TPCA8A02-H comes in a 5.95-mm SOP, and the TPC8A03-H comes in a 5.6-mm SOP-8.
Toshiba America Electronic Components, www.toshiba.com/taec
