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December 2, 2008

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Silicon carbide bipolar junction transistor and SiC Schottky diode in TO-220 package

( 01 Aug 2008 )

TranSiC AB has launched engineering samples of its silicon carbide switching power bipolar junction transistor, together with a silicon carbide Schottky diode in a TO-220 package. The BitSiC1206 is a “normally off” transistor targeted at power electronics. This 1200V, 6A device handles very high junction temperatures.

TranSiCs, www.transic.com

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