The 25V chipset combines IR's latest generation HEXFET MOSFET silicon and benchmark DirectFET packaging technology to deliver a high density, single control and single synchronous MOSFET solution in the footprint of an SO-8, and with slim 0.7 mm profile. The IRF6710S2, IRF6795M and IRF6797M devices are characterized with very low on-resistance (RDS(on)), gate charge (Qg) and gate-to-drain charge (Qgd) to achieve increased efficiency and thermal performance, and enable operation in excess of 25A per phase.
International Rectifier, www.irf.com.cn
