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SiGe Semiconductor Delivers Tiny, Cost-Effective RF Front-End Solution for Wi-Fi Applications

(Technology News, 12 Jan 2009 )

SiGe Semiconductor announced what’s said to be the world’s smallest RF front-end solution for Wi-Fi applications. The device is based on an innovative architecture that is the first to integrate two fully matched power amplifiers on a single die. The architecture optimizes size and power consumption, enabling manufacturers to support wireless multimedia applications in computing and embedded systems while meeting the ever-increasing consumer requirements for miniaturization, battery life and low cost.

The SE2566U is said to be the only RF front-end solution to integrate two 2.4GHz fully matched power amplifiers on a single die. The device also integrates harmonic filters, input and output matching circuitry, and power detectors for each transmit stream in a small 3mm x 3mm package. Moreover, the high level of integration reduces external bill of materials by 80% when compared with two unmatched PA’s for MIMO solutions, resulting in a bill of materials savings of approximately 25 cents.

Innovative architecture optimizes performance, size, cost and power consumption

The SE2566U is the first device to offer MIMO capability with dual power amplifier paths on a single die. The device also includes an integrated receive path situated between the two transmit paths to offer the designer maximum layout flexibility for 2-transmit by 2-receive (2x2) or 2x3 architectures. With the SE2566U, SiGe Semiconductor has solved the challenge of supporting two data streams on a single die. The device includes proprietary techniques to achieve a low-loss pass-thru transmission line for the RX signal. Additionally, integrated filters ensure that the harmonic contribution of the PA is reduced to -50dBm/MHz. By minimizing interference, the SE2566U ensures that systems can support MIMO capability for 802.11n implementations while achieving high system-level performance.

Until now, manufacturers wanting to implement a dual-stream MIMO solution had to use two discrete, unmatched power amplifiers in 4mm x 4mm, 3mm x 3mm or 2mm x 2mm packages. Discrete MIMO solutions consume approximately 250% more board area than the SE2566U. This level of integration can result in cost savings through BOM and board size reduction, and can improve time to market by improving ease-of-use and reducing design time.

The SE2566U also features an integrated load-insensitive transmit power detector offering 20dB of dynamic range. The detector is temperature compensated for consistent and accurate performance. Finally, the SE2566 integrates a reference voltage generator, which allows 1.8V CMOS digital enable control directly from the baseband, and eliminates the need for analog bias controls while drawing less than 1uA.

SiGe Semiconductor, www.sige.com

 
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