STMicroelectronics’ (ST) new series of 30V surface-mount power transistors achieve on-resistance as low as 2mΩ (max.), increasing the energy efficiency of products such as computers, telecom and networking equipment.
Using its latest-generation STripFET VI DeepGATE process, ST has achieved an R
DS(ON) around 20 percent better than the previous generation. The broad choice of industry-standard outlines, including SO-8, DPAK, 5x6mm PowerFLAT, 3.3 x 3.3mm PowerFLAT, PolarPAK, through-hole IPAK and SOT23-6L, offer compatibility with existing pad/pin layouts at the same time as improving efficiency and power density. This will maximize market opportunities for ST’s STripFET VI DeepGATE family.
The first devices introduced using this new process include the STL150N3LLH6, which offers the lowest R
DS(ON) per area in the 5x6mm PowerFLAT package. The STD150N3LLH6 has also been introduced, in the DPAK package, with an R
DS(ON) of 2.4mΩ.
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