Vishay Intertechnology has lauinched its first 190V n-channel power MOSFET plus co-packaged 190V power diode with a compact 2x2mm footprint, and a very thin 0.75mm profile. Offered in the PowerPAK SC-70 package, the SiA850DJ is also said to be the industry's first such device with an on-resistance rating at 1.8V VGS. Typical applications include boost DC/DC converters for high-voltage piezoelectric motors and organic LED (OLED) backlighting in portable devices such as cell phones, PDAs, MP3 players, and smart phones.
Integrating the MOSFET and the power diode into the same package saves designers at least one-third of the PCB area, while at the same time lowering solution costs by eliminating the need for an external diode. While larger devices feature on-resistance ratings down to 2.5V, the SiA850DJ is rated down to 1.8V, which further saves board space by reducing the need for level shift circuitry. The device offers low on-resistance values from 17Ω at 1.8V VGS to 3.8V at 4.5V VGS, and a diode forward voltage of 1.2V at 0.5A.
Vishay IntertechnologyCaption
Offered in the PowerPAK SC-70 package, the SiA850DJ has an on-resistance rating at 1.8V VGS.
