Infineon Technologies and IIT Bombay's joint research team has achieved a major break-through in integration of high voltage functionality for advanced CMOS technologies. The collaboration between Infineon and IIT Bombay, which began in 2007, conducts advanced research in the areas of IO device design and multi-gate MOSFETs for the sub-45nm node CMOS technologies.
A major breakthrough was recently achieved when the joint team of IIT Bombay and Infineon was able to explain the mechanisms behind electrostatic discharge (ESD) events in high voltage FET devices. Weak ESD robustness against exposure to high ESD stress at the end-user side had been a roadblock for the construction of high voltage interfaces at 10V and beyond in advanced CMOS technologies. The insight into the physics of the high voltage devices now allows the optimization of the layout of high voltage IO devices.
Based on this, high voltage functionality ranging from USB interfaces to high voltage line drivers can be integrated into “system-on-silicon” solutions in 45nm CMOS and below.
Dr. Harald Gossner, Senior Principal Engineer, who represents ESD research activity at Infineon stated that this is indeed one of finest examples of academia-industry interaction which has resulted in a substantial value addition to the two collaborating partners. “This collaboration has been very helpful to us in understanding the com-plex nature of some of the existing device reliability issues, and the solutions pro-posed significantly improve our products,” Dr. Gossner said. “The high quality of the graduate students at IIT Bombay and their academic preparation has definitely been an asset to this project.”
Dr. Rajiv Jain, Managing Director, Infineon Technologies India, said, "This project shows Infineon’s strong commitment to semiconductor innovation in India. In our Bangalore centre we are working on critical products in the areas of automotive elec-tronics, broadband, mobile communications and secured chip cards. There is great potential for synergies with high caliber institutions like the IIT-B and I look forward to many more such innovations."
Prof. V. Ramgopal Rao, who is leading this effort from IIT Bombay, said that this collaboration has been extremely helpful in exposing them to challenging real world in-dustry problems, and has provided them a chance to closely interact with one of the world’s leading semiconductor companies. “Though we have been interacting with many semiconductor industries for a long time now, this interaction with Infineon is particularly different because of the immense trust Infineon had in our capabilities and the information that they were willing to share. Since the industries in the semiconductor business survive on their intellectual property (IP), it was important for us to realize the value of IP, and we sometimes had to go that extra mile in educating our students specifically on these aspects. We are happy that this interaction be-tween IIT Bombay & Infineon is turning out to be a win-win situation for both the parties involved,” Prof. Rao stated.
Prof. Devang Khakhar, Director, IIT Bombay, added that the institute accords considerable importance to such interactions with the industry and that it particularly wishes to strengthen such collaborations as it provides the students an opportunity to con-duct directed research. “We are happy that investments we have recently made in strengthening the Nanoelectronics activities at IIT Bombay are really bearing fruit. We have world class research activities taking place in the Centre for Excellence in Nanoelectronics, and the new development is a testimony to the quality research being done,” he said.
There are currently 4 Ph.D. students supported by Infineon under this collaboration at IIT Bombay, including regular visits by these students to Infineon headquarters for internships.
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