Infineon Technologies AG has launched a dual integrated LDMOS power amplifiers for wireless network base stations. Incorporating two LDMOS amplifiers in a single package, the new devices provide two output power stages, making them ideal for Doherty-based amplifiers and for compact designs that benefit from reduced board space. Two of the new devices operate in the 1.8GHz to 2.2GHz frequency range for WCDMA, LTE and TD-SCDMA applications, with output power of either 30W or 40W. The third device operates in the 700MHz to 1GHz for WCDMA, LTE and GSM/EDGE applications, with output power of 30W.
The dual amplifiers are particularly well-suited for Doherty-based designs, which employ separate main and peak power amplifiers to deliver the performance required for 3G and 4G systems. By enabling a reduced footprint for cellular base station amplifiers, the dual LDMOS integrated amplifiers help address industry requirements for multi-carrier operation from a cell site. Multi-carrier and multi-band amplifier designs are also supported by wide RF (radio frequency) modulation bandwidth.
Typical performance of the Infineon devices includes:
• PTMA080304M: GSM/EDGE application at 28V and 960MHz; 30dB gain; 28 percent efficiency; Pout of 2x6W.
• PTMA210304M: 2-carrier WCDMA application at 28V and 2.14GHz; Pout of 2x3W; 29dB gain; 22 percent efficiency; ACPR (Adjacent Channel Power Ratio) of -48dBC.
• PTMA210404FL: Doherty-based design for a 6-carrier TD-SCDMA application at 28V, 2.017GHz; 7.5dB PAR and 10W Pout average; gain of 27dB; 35 percent efficiency; ACLR of -34dBc.
The PTMA080304M and PTMA21034M are available in 20-lead molded plastic packages and the PTMA21040FL is available in a thermally-enhanced open cavity package. All are ROHS compliant and are in production.
Infineon
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