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Infineon Launches Next-gen 600V MOSFETs

(Top News, 23 Jun 2009 )

Infineon Technologies AG has launched its next-generation 600V CoolMOS C6 series of high-performance MOSFETs (metal-oxide semiconductor field-effect transistors). Designed for energy conversion applications such as PFC (Power Factor Correction) or PWM (Pulse Width Modulation) stages, the CoolMOS C6 series features the new C6 technology, which combines the advantages of modern superjunction or compensation devices including ultra-low area specific on-resistance, and reduced capacitive switching losses while offering easy control of the switching behavior as well as high body diode ruggedness.

The C6 series is Infineon's fifth CoolMOS generation of MOSFETs. Its predecessor include the CoolMOS C3 and CoolMOS CP series. While the CoolMOS C3 devices are quite universal, the CP family addresses dedicated applications requiring highest switching speed and lowest RDS(on) related to the package.

The CoolMOS C6 devices are easy to design-in and very well suited for various energy efficient applications such as power supplies or adapters for PCs, notebooks or mobile phones, lighting (HID, High-Intensity Discharge) products, as well as dis-plays (LCD or Plasma TV) and consumer applications like gaming consoles. Infineon’s latest power semiconductor generation allows for highly reliable end products compliant with today’s high efficiency requirements and government regulations.

Infineon's CoolMOS C6 power semiconductors

Infineon


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