NXP Releases World’s First Sub 1mΩ MOSFET in Power S08 Package

NXP Semiconductors has launched PSMN1R2-25YL, claimed to be the world’s first n-channel sub 1mΩ 25V MOSFET boasting the lowest ever RDSon and best in class Figure of Merit. This is the lowest ever RDSon MOSFET in a Power-SO8 package (Loss Free package: LFPAK) and is an extension to NXP’s existing MOSFET portfolio. The newest generation MOSFET combines the high performance Power-S08 LFPAK package with latest Trench 6 generation silicon and offers numerous performance and reliability advantages in a wide variety of demanding applications such as: power OR-ring, motor control and high efficiency synchronous buck-regulators.

NXP’s Trench 6 MOSFETs, PSMN1R2–25YL, have a typical RDSon of 0.9mΩ for a 25V part in Power-S08 (LFPAK), and 1mΩ (typical) for a 30V part.

NXP’s Trench 6 MOSFETs

NXP Semiconductors


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