NXP Semiconductor has announced its SiGe:C QUBIC4 BiCMOS silicon technology, which is expected to deliver higher levels of integration and performance at high frequencies, all in a cost effective way. The technology will enable the development of high-performance, next-generation RF products, including low noise amplifiers, medium power amplifiers and LO generators for mobile phones and communications infrastructure equipment.
NXP’s innovative SiGe:C process also allows customers to incorporate more functionality into devices. The QUBIC4 technology speeds the migration from gallium arsenide (GaAs) components to silicon by enabling cutting-edge low noise performance and IP availability. In particular, NXP’s QUBIC4 process can help speed satellite tracking and fix for GPS systems, improve basestation performance, enable e-metering utilities deployments as well as boosting WLAN, satellite and microwave radio applications.
As a silicon-based technology with the performance of GaAs, QUBIC4 process is also available for ASIC service, combining RF and microwave design IP and application knowledge, state-of-the-art low cost RF packaging and in-house fabrication for volume production.
NXP’s SiGe:C BiCMOS QUBiC4 technology developments have already resulted in three variants: the QUBiC4+, which is silicon-based and ideal for applications up to 5GHz and for medium power amplification; the QUBiC4X, considered the first SiGe:C, is ideal for applications typically up to 30GHz and ultra low noise applications such as GPS; and the QUBiC4Xi, the newest SiGe:C with an improved Ft (>200GHz) and an even lower noise figure, ideal for applications beyond 30GHz such as VSAT and radar.
