ON Semiconductor has introduced four 30V Schottky barrier diodes housed in an ultra-small 0201 Dual Silicon No-lead (DSN2) chip level package. The latest Schottky barrier diodes offer portable electronics designers both the industry’s smallest Schottky diode and best-in-class space-performance.
The devices are available with low forward voltage or low reverse current at forward current ratings of either 100mA or 200mA - the latter being the industry’s smallest 200mA rated parts. The new devices provide an ideal solution for the increasing number of applications where board space is restricted such as mobile handsets, MP3 players and digital cameras.
The Schottky diodes feature solderable metal contacts under the package that enable 100 percent utilization of the package area for active silicon. The new 0201 DSN-2 package—which measures a mere 0.6x0.3x0.3mm—provides three times the board space savings compared to the SOD-923 (also known as 0402). Providing the lowest leakage currents on the market, the new devices help designers address power losses, efficiency and switching speeds.
The NSR0xF30NXT5G series devices are optimized for low forward voltage drop (Vf), 370mV at 10mA. The NSR0xL30NXT5G series devices are designed for low reverse current (Ir), 0.2µA at 10V reverse voltage and offer very low leakage, extending battery life. With ESD ratings of Human Body Model: Class 3B and Machine Model: Class C coupled with low thermal resistance the two series help support design engineers challenged with incorporating ever-increasing amounts of circuitry into small spaces. The Schottky diodes are RoHS compliant and have an operating temperature range of -40°C to +125°C, making them suitable for use in equipment that is used in harsh indoor and outdoor environments.
ON Semiconductor
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