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Fujitsu Develops World’s First Millimeter-wave GaN Transceiver Amplifier Chipset

(Top News, 01 Oct 2009 )

Fujitsu Ltd and Fujitsu Laboratories Ltd have developed the world’s first gallium-nitride (GaN) HEMT-based transceiver amplifier chipset for broadband wireless transmission equipment operating in the millimeter bandwidth, the range of 70GHz to 100GHz, for which widespread usage is expected to grow.

The new transceiver amplifier chipset features a GaN HEMT-based high-output transmitter amplifier and high-sensitivity receiver amplifier. The transmitter amplifier achieves the world’s highest level of performance with output of 350mW, while the receiver amplifier features the world’s highest level of signal gain at 310 times (310x) operating in the W-band with a low noise figure of 3.8dB.

Compared to gallium-arsenide (GaAs)-based technology, the new GaN HEMT-based amplifier chipset for the millimeter band is anticipated to offer output that is increased by approximately four-fold, and a noise figure decreased by 40 percent, while transmission ranges are expected to be extended by roughly three-fold.

Used as an alternative to fiber-optic cabling, Fujitsu’s new GaN HEMT-based millimeter-band transceiver amplifier will help bridge the digital divide for wireless communications, by making communications equipment for trunk lines and ultra-high-speed fixed wireless access higher in quality and more compact, ultimately making wireless broadband more practical.

Fujitsu Laboratories

Fujitsu


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