Fujitsu Laboratories Ltd has developed a novel technology for forming graphene transistors directly on the entire surface of large-scale insulating substrates at low temperatures while employing chemical-vapor deposition (CVD) techniques, which are in widespread use in semiconductor manufacturing. Compared to the temperatures of 800°C-1,000°C at which graphene is formed with conventional methods, Fujitsu has succeeded in significantly lowering the graphene fabrication-temperature to 650°C, thus allowing for graphene transistors to be formed directly on a variety of insulator substrates, including substrates that are sensitive to the higher temperatures.
Graphene is a nano-scale carbon material (nano-carbon) with the potential to be the material used in next-generation low-voltage, low-power transistors, as graphene features high-electron mobility and hole mobility characteristics.
Details of this technology will be presented at the Materials Research Society 2009 (MRS 2009) Fall Meeting, to be held from November 30 to December 4 in Boston.
Fujitsu Laboratories
