Fairchild Semiconductor has launched a MOSFET family enabling thinner, lighter and more compact power supply solutions, while continuing to deliver high efficiency and excellent thermal enhancements. Rated at 25V, the FDMC7570S MOSFET delivers the lowest R
DS(ON) in the industry in a 3x3mm MLP package—providing unmatched efficiency and junction temperature improvements. With an R
DS(ON) of 1.6mΩ at 10V
GS (2.3mΩ 4.5V
GS), the MOSFET delivers 50 percent lower conduction losses than alternative solutions in the same form factor – bringing designers the highest power density achievable today. All of these improvements are a direct result of Fairchild’s advanced proprietary PowerTrench process technology, which yields an exceptionally low R
DS(ON), total gate charge (Q
G) and Miller Charge (Q
GD). These MOSFETs feature a proprietary shielded gate architecture which reduces undesired high-frequency switching noise.
In addition, the output capacitance (C
OSS) and reverse recovery charge (Qrr) have been minimized to reduce synchronous MOSFET losses in a buck conversion – enhancements that result in high peak efficiencies, presently unmatched by lateral devices.
In addition to the 25V FDMC7570S, Fairchild’s new MOSFETs include the 30V FDMC7660S and the FDMC7660. These devices are available in the ultra-compact Power33, 3.3x3.3mm MLP package.
Fairchild Semiconductor FDMC7570S Power Trench MOSFET
Fairchild Semiconductor FDMC7660 Power Trench MOSFET
Fairchild Semiconductor
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