Design and component engineers for portable applications, such as cell phones, portable medical devices and portable media players, need efficient and space-saving devices for their designs. Fairchild Semiconductor’s N-Channel MOSFETs, the FDZ192NZ and FDZ372NZ, answer that need by providing lower RDS(ON) ratings, increasing efficiency and extending battery life, through the use of advanced PowerTrench process technology.
Fairchild’s FDZ192NZ and FDZ372NZ are the smallest and thinnest wafer-level chip-scale (WL-CSP) N-Channel devices in the industry. By using an advanced chip-scale packaging process, these devices provide significant space savings, critical for portable applications.
These advanced WL-CSP MOSFETs represent a breakthrough in packaging technology, enabling devices to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge and low RDS(ON), with guaranteed RDS(ON) ratings with VGS as low as 1.5V. These devices offer human body model (HBM) ESD protection levels greater than 2.2kV.
The FDZ192NZ is housed in a 1.5x1mm package with 0.65mm thickness. The FDZ372NZ is housed in a 1x1mm package with an industry leading 0.4mm thickness. Compared to closest industry comparable devices that are 1.6x1.6mm in size, the FDZ192NZ is 41 percent smaller, while the FDZ372NZ is 61 percent smaller and 40 percent thinner.
The FDZ192NZ and FDZ372NZ are part of a comprehensive portfolio of advanced MOSFETs that answers the industry’s need for compact, low-profile, high performance MOSFETs for charging, load switching, DC-DC and boost applications.
Fairchild Semiconductor
Fairchild’s FDZ192NZ N-Channel MOSFET
Fairchild’s FDZ372NZ N-Channel MOSFET
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