Elpida Memory Inc. (Elpida), Japan's supplier of DRAM, announced the development of new circuit technologies for DDR3 SDRAM in a paper presented at the International Solid State Circuits Conference (ISSCC). The new technologies consist of a transfer circuit that realizes access time (data readout time), and a data readout timing generator that enables stable data transfer rate in the DRAM's output block. Using the new technologies, Elpida produced a 512Mb DDR3 SDRAM with a column access time of 8.75ns and data transfer rate of 1.6Gbps.
The company said that based on new technologies, Elpida produced 512Mb DDR3 SDRAM devices using 90nm process technology. Repeated evaluation results showed that even at low 1.5 V operation, consistent, high yield production of DDR3 SDRAM chips with the performance at low voltage--a column access time of 8.75ns and a data transfer rate of 1.6Gbps--is achievable using these new technologies. Elpida is ready to start the production of DDR3 SDRAM using these new technologies, and mass production will begin based on market demand.
Elpida
