MoSys Inc., provider of high-density system-on-chip (SoC) embedded memory solutions, and Fujitsu Limited, provider of customer-focused IT and communications solutions for the global marketplace, announced an agreement under which MoSys' 1T-SRAM technology is licensed to Fujitsu on its advanced 65 nanometer (nm) production process.
Kimiaki Satoh, general manager of the FCRAM division, Electronic Devices Group of Fujitsu Limited, said, "Since partnering with MoSys, Fujitsu has acquired much experience in the design and manufacturing methodologies of 1T-SRAM-Q technology. We feel this is one of the best embedded memory solutions on 65nm technology. Fujitsu already has its own advanced 65nm technology. By having 1T-SRAM-Q based memory macros available on our cutting-edge technology, we can empower our customers by enabling them to meet some of the most demanding challenges of future silicon products—achieving cost competitiveness while maintaining higher performance. We accomplish these goals without sacrificing memory density and speed."
Chet Silvestri, chief executive officer at MoSys, stated, "We are very pleased to reach this agreement with Fujitsu, which sets an important milestone in validating MoSys patented technologies at the most advanced process node. By adopting MoSys 1T-SRAM technology for its 65 nm products, Fujitsu can use the extensive experience developed on the 0.13-micron and 90 nm processes to provide optimized solutions for its customer base and provides momentum for scaling below 65 nm in the future."
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