The DA8801 from Dialog packs GaN power FETS with analogue drivers, logic and protection to enable higher power density power adapters for smartphones and laptops.

Dialog Semiconductor has brought to market the DA8801 that integrate GaN power FETS with analogue drivers, logic and protection to form an efficient 650V half-bridge. According to the company, the product enables power adapters that are smaller and have higher power density.

The half-bridge IC targets fast-charging power adapters for smartphones and notebooks. It teams such building blocks as gate drivers and level-shifting circuits with 650V high-side and low-side power switches to achieve an optimised design that reduces power losses by as much as 50% with up to 94% power efficiency.

The DA8801 allows seamless implementation of GaN, eliminating complex circuitry needed to drive discrete GaN power switches. A reduction in the size of power electronics by up to 50% enables a typical 45W adapter to fit into a 25W or smaller form factor.

Offered in a 5mm x 5mm QFN package, sample quantities of the DA8801 will be available in 4Q16.

First published by EDN.