Toshiba achieves higher hole mobility for future generation CMOS technology by twisted Direct Silicon Bonding technology 4/7/2008

Toshiba Corporation has announced that, together with IBM Corporation, it has developed a higher performance CMOS FET, a high priority for advanced system LSI. The new technology matches the highest possible performance, and opens the way for further advances in process technology. Toshiba and IBM announced the achievement on June 19, at the VLSI Symposia 2008, in Honolulu, Hawaii, U.S.A. High performance, low power and scalability have won CMOS technology a central place in semiconductor technology, a position now under threat as CMOS scaling ...