1700-V SMD SiC MOSFETs offer greater reliability

Article By : Susan Nordyk

Infineon now offers a 1700-V class in its CoolSiC MOSFET family, enabling greater reliability, as well as low switching and conduction losses.

Infineon now offers a 1700-V class in its CoolSiC MOSFET family, enabling greater reliability, as well as low switching and conduction losses. Housed in surface-mount packages, the IMBF170R1K0M1, IMBF170R650M1, and IMBF170R450M1 provide on-resistance ratings of 1000 mΩ, 650 mΩ, and 450 mΩ, respectively, and target auxiliary power supplies in three-phase conversion systems.

Infineon PR image of the 1700V CoolSic MOSFET

The parts’ 1700-V blocking voltage eliminates design concerns regarding overvoltage margins and reliability of power supplies. They are optimized for flyback topologies with +12-V/0-V gate-source voltage compatible with common PWM controllers. Further, they do not need a gate driver IC and can be operated directly by the flyback controller.

According to Infineon, CoolSiC trench technology achieves efficiency that is 0.6% higher than other 1700-V SiC MOSFETs. The low losses enable compact SMD assembly with natural convection cooling without the need for a heatsink. The 1700-V CoolSic MOSFETs come in a 7-lead D2Pak surface-mount package offering extended creepage and clearance distances over 7 mm. Devices are in series production and available now.

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