1700V SiC MOSFET enables high breakdown voltage

Article By : Graham Prophet

Combining with ROHM’s AC/DC converter control IC designed specifically for SiC MOSFET drive maximises performance and improve efficiency by up to 6%.

Rohm Semiconductor has added a 1700V SiC MOSFET for industrial applications, including manufacturing equipment and high-voltage general-purpose inverters. The SCT2H12NZ provides the high breakdown voltage required for auxilliary power supplies in industrial equipment.
Conduction loss is reduced by a factor of eight over conventional silicon MOSFETs, contributing to greater energy efficiency. Combining with ROHM’s AC/DC converter control IC designed specifically for SiC MOSFET drive (BD7682FJ-LB) will make it possible to maximise performance and improve efficiency by up to 6%. This allows smaller peripheral components to be used.

Compared to 1500V silicon MOSFETs used in auxilliary power supplies for industrial equipment, the SCT2H12NZ provides higher breakdown voltage (1700V) with 8x smaller on-resistance (1.15Ω). Its TO-3PFM package maintains the creepage distance (distance measured along the surface of the insulating material) required by industrial equipment. ROHM is releasing a surface mount type (TO268-2L) that also provides adequate creepage distance.

Rohm has evaluation boards and kits that make it possible to immediately begin evaluation and development. In addition to the BD7682FJ-LB-EVK-402, a gate drive board for evaluating ROHM’s full SiC module along with a snubber module are available. More information can be found on ROHM’s dedicated support page.

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