62mm all-SiC power module enables faster switching speed

Article By : Wolfspeed

The latest devices from Wolfspeed promise exceptional efficiency and power density for high current power electronics such as: converters/inverters, motor drives, industrial electronics and EVs.

Wolfspeed, A Cree and a global supplier of silicon carbide (SiC) power products, has announced what it says is its first fully-qualified commercial power module. According to the company, the high-performance 62mm all-SiC power module enables exceptional efficiency and power density for high current power electronics such as converters/inverters, motor drives, industrial electronics and high performance electric vehicle systems.

The module allows systems designers to realise lighter weight systems that are up to 67% smaller by achieving efficiencies of over 98% and improvements in power density of up to 10 times compared to systems built with silicon-based technologies, noted Wolfspeed.

[62mm all-SiC power module]

Compared to conventional silicon IGBT power modules, or even previous generations of SiC MOSFET modules, the module will offer significantly higher power density for applications in which volume and weight are critical limitations. Operating at a higher switching frequency without any compromise in system efficiency means a reduction in the number and size of magnetic and passive components required for the balance of the system. The superior thermal characteristics of SiC devices, along with the packaging design and materials, enable the module to operate at 175°C, which is a key advantage for many industrial, aerospace and automotive applications.

The Wolfspeed module design promises a 66% reduction in module inductance to 5.5nH, compared to competitive power products at 15nH. This reduction in module inductance enables faster switching speeds, higher frequency operation and ultra-low losses, detailed the company.

Available as part number CAS325M12HM2, the high performance power module is configured in a half-bridge topology comprised of seven 1.2kV 25mΩ C2M SiC MOSFETs and six 1.2kV 50A Z-Rec Schottky diodes. The companion gate driver (CGD15HB62LP) is specifically designed for integration with the module to fit within the 62mm mounting footprint. An engineering evaluation kit that includes both the module and the gate driver is also available so design engineers can quickly and easily test the performance of the device in their systems.

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