STMicroelectronics, MACOM unveil RF GaN-on-Si prototypes
ST and MACOM have successfully developed radio-frequency gallium-nitride-on silicon (RF GaN-on-Si) prototypes.
Infineon extends CoolSiC M1H technology portfolio with 1200V SiC MOSFETs
Infineon's M1H chip offers high flexibility and is suitable for solar energy systems, such as inverters, that have to meet…
EPC rad-hard transistor targeted at demanding space applications
EPC has expanded its family of radiation-hardened gallium nitride products with the release of the EPC7007 GaN FET.
EPC launches new AEC-qualified lidar integrated circuit
The EPC2221 is the latest addition to EPC's growing family of GaN transistors and ICs designed for demanding automotive applications.
Delivering on the EV range extension promise of SiC in traction inverters
SiC MOSFET power switches can help shrink the gap between consumers' EV range expectations and OEMs' ability to satisfy them…
Infineon launches optimized CoolSiC MOSFETs 650V in D²PAK
Infineon has launched a new family of CoolSiC 650V silicon carbide (SiC) MOSFETs to deliver reliable, easy-to-use, and cost-effective top…
Showa Denko launches mass production of 6in SiC single crystal wafers
Showa Denko has started mass production of 6in silicon carbide (SiC) single crystal wafers.
STMicroelectronics 50W GaN converter enables high-efficiency power designs in consumer, industrial applications
ST's VIPerGaN50 simplifies building single-switch flyback converters up to 50W and integrates a 650V GaN power transistor for improved energy…
TI to showcase next-gen power-management devices at APEC 2022
Texas Instruments will demonstrate at APEC 2022 how engineers can overcome some of their most pressing power-management design challenges.
SiC MOSFETs, SBDs substitute silicon IGBTs at higher voltages
Silicon carbide (SiC) serving higher voltages and available in die, packaging and module formats is pushing barriers in power designs.