2022-05-16 - STMicroelectronics

STMicroelectronics, MACOM unveil RF GaN-on-Si prototypes

ST and MACOM have successfully developed radio-frequency gallium-nitride-on silicon (RF GaN-on-Si) prototypes. 

2022-05-13 - Infineon Technologies AG

Infineon extends CoolSiC M1H technology portfolio with 1200V SiC MOSFETs

Infineon's M1H chip offers high flexibility and is suitable for solar energy systems, such as inverters, that have to meet…

2022-05-09 - Efficient Power Conversion (EPC)

EPC rad-hard transistor targeted at demanding space applications

EPC has expanded its family of radiation-hardened gallium nitride products with the release of the EPC7007 GaN FET.

2022-04-22 - Efficient Power Conversion

EPC launches new AEC-qualified lidar integrated circuit

The EPC2221 is the latest addition to EPC's growing family of GaN transistors and ICs designed for demanding automotive applications.

2022-04-15 - Timothé Rossignol, Analog Devices Inc.

Delivering on the EV range extension promise of SiC in traction inverters

SiC MOSFET power switches can help shrink the gap between consumers' EV range expectations and OEMs' ability to satisfy them…

2022-03-30 - Infineon Technologies AG

Infineon launches optimized CoolSiC MOSFETs 650V in D²PAK

Infineon has launched a new family of CoolSiC 650V silicon carbide (SiC) MOSFETs to deliver reliable, easy-to-use, and cost-effective top…

2022-03-29 - ACN Newswire

Showa Denko launches mass production of 6in SiC single crystal wafers

Showa Denko has started mass production of 6in silicon carbide (SiC) single crystal wafers.

2022-03-25 - STMicroelectronics

STMicroelectronics 50W GaN converter enables high-efficiency power designs in consumer, industrial applications

ST's VIPerGaN50 simplifies building single-switch flyback converters up to 50W and integrates a 650V GaN power transistor for improved energy…

2022-03-22 - Texas Instruments

TI to showcase next-gen power-management devices at APEC 2022

Texas Instruments will demonstrate at APEC 2022 how engineers can overcome some of their most pressing power-management design challenges.

- Majeed Ahmad

SiC MOSFETs, SBDs substitute silicon IGBTs at higher voltages

Silicon carbide (SiC) serving higher voltages and available in die, packaging and module formats is pushing barriers in power designs.