Revolutionary CoolSiC™ Trench MOSFET combining SiC performance with silicon ruggedness

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This paper summarizes selected features of the Infineon CoolSiC™ MOSFET. The device combines low static and dynamic losses with high Si-IGBT like gate oxide reliability right fitting to typical industrial requirements. The temperature behavior, threshold voltage selection and Vgs_on makes the device easy to operate, in particular for operation in parallel. The switching behavior can be fully controlled by the gate resistor.

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