eGaN FETs ride dev board for enhanced LiDAR performance
Article By : EPC
The EPC9126 board can accommodate an EPC2001C 100V eGaN FET with a pulse current rating of up to 150A for users needing higher current capability.
In a LiDAR system, speed and accuracy of detection is critical. EPC’s 100V high current pulsed laser diode driver evaluation board (EPC9126) offers rapid transition capability of eGaN FETs that provide power pulses to drive the laser up to 10 times faster than an equivalent MOSFET, enhancing the overall performance of a LiDAR system.
The EPC9126 development board is intended to drive laser diodes and features an EPC2016C ground-referenced eGaN FET driven by a Texas Instruments UCC27611 gate driver. The EPC2016C is a 100V maximum voltage device capable of current pulses up to 75A with total pulse widths of 5ns. The board can accommodate an EPC2001C 100V eGaN FET with a pulse current rating of up to 150A for users needing higher current capability.
The PCB is also designed to minimise the power loop inductance while maintaining mounting flexibility for the laser diode. It includes multiple on-board passive probes for voltages and discharge capacitor current measurement, and equipped with SMA connections for input and sensing designed for 50Ω systems. In addition, the user can enable an optional precision narrow pulse generator.
The board includes multiple low inductance connection options for mounting laser diodes and can drive these via a discharging a capacitor or directly from a power bus.
The board can also be used for other applications requiring a ground-referenced eGaN FET, for example in Class E or similar circuits.
