EPC's EPC2067 eGaN FET offers designers a smaller, more efficient, and more reliable device for high-performance, space-constrained applications.
Efficient Power Conversion Corp. (EPC) has expanded its portfolio of low-voltage, off-the-shelf gallium nitride (GaN) transistors with the introduction of the EPC2067 (1.3mΩ typical, 40V) eGaN FET.
The EPC2067 is ideal for applications with demanding requirements for high power density performance including 48V–54V input servers. Lower gate charges and zero reverse recovery losses enable high frequency operation of 1MHz, and beyond, at high efficiency in a tiny 9.3mm2 footprint for state-of-the-art power density.
“The EPC2067 makes the ideal switch for the secondary side of the LLC DC-DC converter from 40V–60V to 12V. This 40-volt device offers improved performance and cost compared with previous-generation 40V GaN FETs, allowing designers to economically improve efficiency and power density,” said Alex Lidow, EPC’s co-founder and CEO.
The EPC90138 development board is a 40V maximum device voltage, 40A maximum output current, half bridge with onboard gate drives, featuring the EPC2067 eGaN FETs. This 50.8×50.8mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2067.
EPC is the leader in enhancement-mode gallium nitride (eGaN) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, and drones, and low-cost satellites.