GaN FETs can simplify application designs
Article By : Susan Nordyk
GaN HEMT H2 FETs from Nexperia come in TO-247 and CCPAK surface-mount packages for use in automotive, 5G, and data-center applications.
GaN HEMT H2 FETs from Nexperia come in TO-247 and CCPAK surface-mount packages for use in automotive, 5G, and data-center applications. The GAN041-650WSB is a 650-V, 35-mΩ FET, while the GAN039-650NBB is a 650-V, 39-mΩ device.
According to the manufacturer, the normally-off parts achieve superior switching figure of merit (FOM) and on-state performance with improved stability. They can simplify application designs due to their cascode configuration, which eliminates the need for complicated drivers and controls. GaN technology employs through-epi vias, minimizing defects and shrinking die size by about 25%.
On-resistance is also reduced to just 41 mΩ maximum (35 mΩ typical) at 25°C with the initial FET release in TO-247 packages. On-resistance is further decreased to 39 mΩ maximum (33 mΩ typical) at 25°C with the CCPAK, which features a copper clip to replace internal bond wires, cutting parasitic losses and improving reliability. CCPAK GaN FETs are available in top- and bottom-cooled configurations.
The 650-V GaN FETs are sampling now. Both the TO-247 and CCPAK versions meet AEC-Q101 requirements for automotive applications.
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