GaN-on-SiC amplifier operates at up to 2.7GHz
Article By : Qorvo
The QPD2731 addresses the shift towards gallium nitride on silicon carbide (GaN-on-SiC) with pre-matched, discrete GaN-on-SiC high electron mobility transistors.
A new asymmetric Doherty amplifier from RF solutions provider Qorvo achieves high levels of power efficiency in the design of wireless base station equipment.
Customers are increasingly moving to gallium nitride on silicon carbide (GaN-on-SiC) to improve performance, linearity and efficiency for wireless base stations compared to LDMOS and GaN-on-Si, which have poor thermal characteristics. The QPD2731 addresses the shift with pre-matched, discrete GaN-on-SiC high electron mobility transistors (HEMTs).
The new amplifier, currently available for sampling, provides the highest performance available in its operating range of 2.5GHz to 2.7GHz. It can deliver PAVG of 50W at 48V operation.
The QPD2731 can be linearised by standard, commercially available, third-party DPD systems, according to Qorvo.