Infineon and Foxconn are collaborating on SiC development, leveraging Infineon's automotive SiC innovations and Foxconn's know-how in automotive systems, to advance the electromobility industry.
Infineon Technologies AG and Hon Hai Technology Group (Foxconn) have signed a Memorandum of Understanding (MoU) focused on silicon carbide (SiC) development, leveraging Infineon’s automotive SiC innovations and Foxconn’s know-how in automotive systems. The goal is to establish a long-term partnership in the field of electric vehicles (EV) to jointly develop advanced electromobility with efficient and intelligent features.
Under the MoU, Infineon and Foxconn will collaborate on the implementation of SiC technology in automotive high-power applications like traction inverters, onboard chargers, and DC-DC converters. Both parties intend to jointly develop EV solutions with outstanding performance and efficiency based on Infineon’s automotive system understanding, technical support and SiC product offerings combined with Foxconn’s electronics design and manufacturing expertise and the capability of system-level integration.
In addition, the companies plan to establish a system application center in Taiwan to further expand the scope of their cooperation. This center will focus on optimizing vehicle applications, including smart cabin applications, advanced driver assistance systems (ADAS) and autonomous driving applications. It will also address electromobility applications such as battery management systems and traction inverters.
The collaboration covers a wide range of Infineon’s automotive products, including sensors, microcontrollers, power semiconductors, high-performance memories for specific applications, human machine interface and security solutions. The system application center is expected to be established within 2023.