Mitsubishi Electric is now shipping samples of its LV100-type T-series 2kV IGBT module for industrial use.
Mitsubishi Electric Corp. is now shipping samples of its LV100-type T-series 2kV insulated-gate bipolar transistor (IGBT) module for industrial use. The new power semiconductor device is expected to downsize and reduce the power consumption of power-conversion equipment for use with renewable-energy sources.
Power semiconductors for efficiently converting electric power are being increasingly utilized as key devices that can help to lower the carbon footprint of global society. At the same time, efficient power conversion through the deployment of increasingly higher system-operating voltages is being demanded for power grids that use renewable-energy power sources, which has led to the development of power converters rated at DC1500V, the upper limit of the EU’s Low Voltage Directive.
Module samples that Mitsubishi Electric is shipping have a blocking-voltage capability of 2kV, which is suitable for DC1500V power conversion equipment used mainly for large-capacity systems of several hundred kW to several MW, including renewable-energy power sources. Adopting 2kV withstand voltage semiconductors will enable customers to simplify the design of their DC1500V power-conversion equipment. Also, the latest 7th-generation IGBT and Relaxed Field of Cathode (RFC) diode will help to downsize and reduce the power consumption of power-conversion equipment for renewable-energy power supply. In addition, the module’s industrial LV100-type package, which is suitable for large-capacity systems due to its easy-paralleling configuration, will help to simplify large-capacity system designs.
The new 2kV-rated IGBT simplifies the design of DC1500V-rated power converters, including for renewable-energy power sources, which are difficult to design using conventional 1.7kV-rated IGBTs.