Toshiba’s TPH4R10ANL and TPH6R30ANL MOSFETs utilise low-voltage trench structure process to achieve low on-resistance and high-speed performance.
Along with the spread and evolution of quick chargers, higher performance is demanded for power MOSFETs used in secondary-side rectifiers. Toshiba's Storage & Electronic Devices Solutions has expanded its line-up of low-voltage N-channel power MOSFETs with the addition of 100V N-channel power MOSFETs supporting 4.5V logic level drive for quick chargers.
The two MOSFETs in the U-MOS VIII-H family (TPH4R10ANL and TPH6R30ANL) utilise Toshiba’s low-voltage trench structure process to achieve the low on-resistance and high-speed performance. The structure lowers the performance index for “RDS(ON) * Qsw,” improving switching applications. Output loss is improved by the reduction of output charge, which can contribute to higher set efficiency. Also, support for 4.5V logic level drives makes buffer-less drive from the controller IC possible, contributing to reducing power consumption of the system.
Furthermore, these products can respond to the high output and voltage power supplies required in USB 3.0 related applications. Thus, are suited for applications including quick chargers, switched-mode power supplies and DC-DC converters for servers and communication equipment.